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 POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059
Value
60 80 100 60 80 100 60 80 100
Unit
VCBO
Collector-Base Voltage
IE=0
V
VCEO
Collector-EmitterVoltage
IB=0
V
VCEX
Collector-EmitterVoltage
VBE=-1.5 V
V
VEBO
Emitter-Base Voltage
IC=0
5.0
V
Page 1 of 5
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
PT
Power Dissipation
@ TC < 25
TJ Ts
Junction Storage Temperature
2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059
12
A
20
A
0.2
mA
150
Watts
200 -65 to +200
C
THERMAL CHARACTERISTICS Symbol Ratings
2N6050 2N6057 2N6051 2N6058 2N6052 2N6059
Value
Unit
RthJ-C
Thermal Resistance, Junction to Case
1.17
C/W
Page 2 of 5
ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
V 2.0 mA 1.0 mA 5 mA 500 A
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCEO(SUS)
Collector-Emitter Sustaining Voltage (*)
2N6050 2N6057 2N6051 VCE= VCEX =80 V, VBE=-1.5 V 2N6058 VCE= VCEX =100 V, 2N6052 VBE=-1.5 V 2N6059 VCE= VCEX =60 V, VBE=-1.5 V 2N6050 TC=150C 2N6057 VCE= VCEX =80 V, VBE=-1.5 V 2N6051 TC=150C 2N6058 VCE= VCEX =100 V, 2N6052 VBE=-1.5 V, TC=150C 2N6059 2N6050 VCE=30 Vdc, IB=0 2N6057 2N6051 VCE=40 Vdc, IB=0 2N6058 2N6052 VCE=50 Vdc, IB=0 2N6059 2N6050 2N6057 VEB=5 V 2N6051 2N6058 2N6052 2N6059 2N6050 60 2N6057 2N6051 IC=0.1 A 80 2N6058 2N6052 100 2N6059 VCE= VCEX =60 V, VBE=-1.5 V
Page 3 of 5
IC=6 A, IB=24 mA
VCE(SAT)
Collector-Emitter saturation Voltage (*)
IC=12 A, IB=120 mA
VBE(SAT)
Base-Emitter Saturation Voltage (*)
IC=12 A, IB=120 mA
VBE(ON)
Base-Emitter Voltage (*)
IC=6 A, VCE=3 V
fT
Transition Frequency
IC=5 A, VCE=3 V, f=1 MHz
VCE=3 V, IC=6.0 A
hFE
DC Current Gain (*)
VCE=3.0 V, IC=12 A
2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059
-
-
2.0
V
-
-
3.0
-
-
4
V
-
-
2.8
V
4
-
-
MHz
750
-
18000
-
100
-
-
! ! ! For PNP types current and voltage values are negative ! ! !
(*) Pulse Width 300 s, Duty Cycle 2.0% Page 4 of 5
MECHANICAL DATA CASE TO-3
DIMENSIONS
A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector
Page 5 of 5


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